MLP1N06CL

Overview

The MLP1N06CL is a logic-level N-Channel MOSFET from onsemi's SmartDiscretes series, housed in a TO-220AB package. It features a drain-source breakdown voltage (Vds) of 59 V and a continuous drain current (Id) of 1 A. The device exhibits a maximum on-resistance (Rds(on)) of 750 mΩ at a gate-source voltage (Vgs) of 4.5 V. It operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

• Logic-level gate drive capability for direct interface with standard logic outputs
• Integrated thermal protection mechanisms inherent to the SmartDiscretes design
• High-voltage blocking performance suitable for low-voltage power switching applications

Applications

• Low-power DC-DC converter output stages
• General-purpose load switching circuits
• Battery management system protection switches

Procurement Notes

Verify the specific suffix against the official datasheet to confirm pinout and electrical tolerances. Ensure the procurement channel provides the original manufacturer documentation for quality assurance. Cross-reference the package outline dimensions with your PCB footprint library before finalizing orders.

Selection Notes

Select this component when a single N-Channel MOSFET with logic-level compatibility is required in a through-hole TO-220 package. It is appropriate for applications demanding moderate current handling up to 1 A with minimal gate drive complexity. Evaluate thermal dissipation requirements based on the 750 mΩ on-resistance under expected load conditions.

Part Context

This part belongs to onsemi's SmartDiscretes family, which integrates protection features into discrete power packages. The MLP1N06CL serves as a robust solution for replacing multiple discrete components in simple power control topologies, offering a compact alternative to complex driver ICs for basic on/off switching tasks.

Replacement Considerations

Direct substitutes include other 60V 1A N-Channel MOSFETs in TO-220 packages such as the IRFZ44N or STP16NF06, provided their Rds(on) and gate threshold voltages meet the circuit requirements. Verify that replacement devices support logic-level driving if direct microcontroller interfacing is maintained.