MMA155PP5

RF Amplifiers Overview

The MMA155PP5 is a broadband GaAs PHEMT MMIC distributed amplifier from Microchip Technology, operating from DC to 22 GHz. It delivers 15.5 dB gain with a positive slope and features a high saturated power (Psat) of 32 dBm at 12 GHz. The device requires a 13V supply at 640 mA current draw. Packaged in a QFN format, it supports surface-mount installation and is designed for high-performance RF applications requiring wideband signal amplification.

RF Amplifiers Feature Summary

• Broadband frequency coverage extending from DC to 22 GHz
• High output saturation power of 32 dBm at 12 GHz
• Positive gain slope characteristic across the operational bandwidth

RF Amplifiers Applications

• Wideband test and measurement instrumentation
• Military radar systems
• Electronic warfare subsystems

RF Amplifiers Procurement Notes

Verify component authenticity through authorized Microchip distributors or certified partners. Confirm RoHS compliance status and humidity sensitivity handling requirements prior to assembly. Ensure supply chain documentation matches the specific manufacturing lot and revision level indicated on the official datasheet.

RF Amplifiers Selection Notes

Select this component when wideband amplification up to 22 GHz is required with high output power capabilities. The 13V supply requirement and 640 mA current consumption must be accommodated in the power design. Consider the positive gain slope feature if flat response compensation is needed elsewhere in the signal chain.

RF Amplifiers Part Context

This part belongs to Microchip's MMIC portfolio utilizing GaAs PHEMT technology. It serves as a high-power distributed amplifier solution within the wireless and RF integrated circuits category. The QFN package facilitates compact integration into modern RF front-end modules.

RF Amplifiers Replacement Considerations

No public confirmed substitute part numbers are available.