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Product Detailed Parameters
- Description：DIODE ARRAY GP 75V 100MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：75 V
- Current - Average Rectified (Io) (per Diode)：100mA (DC)
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：4 ns
- Current - Reverse Leakage @ Vr：100 nA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The MMBD2836LT1G is a monolithic dual switching diode from onsemi, housed in an SOT-23-3 surface-mount package. It features a common anode configuration with a repetitive peak reverse voltage of 75 V and a maximum DC forward current of 100 mA. The device exhibits a fast reverse recovery time of 4 ns and a low junction capacitance of 4 pF. Operating temperatures range from -55 °C to +150 °C, ensuring reliability across diverse environmental conditions.
Feature Summary
- Monolithic dual switching diode structure for compact circuit integration
- Fast reverse recovery characteristics suitable for high-speed applications
- Low junction capacitance to minimize signal distortion
- Wide operating temperature range for robust performance
Applications
- High-speed switching circuits
- Signal demodulation systems
- Logic level shifting interfaces
Procurement Notes
Verify the specific suffix 'LT1G' against official onsemi documentation to confirm lead-free status and tape-and-reel packaging specifications. Ensure the component matches the required SOT-23-3 footprint and pinout configuration for your PCB design. Cross-reference datasheet electrical limits with your system's operational parameters to prevent overstress conditions during procurement validation.
Selection Notes
Select this component when a common anode dual diode configuration is required within a small SOT-23-3 footprint. Prioritize this part for designs demanding fast switching speeds and low capacitance. Compare its 75 V reverse voltage rating against circuit requirements to ensure adequate safety margins. Evaluate thermal management needs given the 150 °C maximum junction temperature capability.
Part Context
This device belongs to the MMBD2836L series of monolithic dual switching diodes manufactured by onsemi. It serves as a compact solution for replacing discrete diode pairs in space-constrained designs. The series offers consistent electrical characteristics optimized for general-purpose high-speed switching applications in consumer and industrial electronics.
Replacement Considerations
- MMBD2835LT1G
- SMMBD2835LT1G
FAQ
What is the internal configuration of the MMBD2836LT1G?
The MMBD2836LT1G contains two diodes connected in a common anode configuration.
What is the maximum operating temperature for this component?
The maximum operating temperature for the MMBD2836LT1G is +150 °C.
