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The MMBD4448DW is a surface-mount switching diode manufactured by Diodes Incorporated, housed in an SOT363 package. It features a dual isolated interposing configuration with two independent diodes. Key electrical parameters include a peak repetitive reverse voltage of 75 V and a non-repetitive peak reverse voltage of 100 V. The device supports a forward continuous current of 500 mA and dissipates up to 200 mW of power. Reverse recovery time is specified at 4.0 ns, while total capacitance is 4.0 pF. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix against official documentation, as packaging quantities may vary between tape & reel formats. Confirm that the component meets all applicable environmental compliance standards required for your specific manufacturing process. Ensure compatibility with your assembly equipment regarding the SOT363 package dimensions and moisture sensitivity level.
Select this component when a compact dual-diode solution with fast switching characteristics is required. The SOT363 package offers space efficiency compared to larger discrete packages. Consider the 75 V reverse voltage rating and 500 mA forward current capability to ensure adequate headroom for your circuit's operational requirements and thermal management constraints.
This part belongs to the MMBD4448 series of surface-mount switching diodes produced by Diodes Incorporated. The series includes various configurations such as common cathode, common anode, and isolated variants. These components are designed for high-reliability applications and are often utilized in automotive and industrial environments where small form factors and fast response times are critical design parameters.
MMBD4448DW-7-F
The maximum operating and storage temperature range for the junction is -55°C to +150°C.
While standard parts are qualified to JEDEC standards for high reliability, automotive applications requiring specific change control should refer to the related automotive grade (Q-suffix) parts.
The reverse recovery time is typically 4.0 ns under test conditions of IF = IR = 10mA and IRR = 0.1 x IR.