SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Infineon MMBD7000LT1HTSA1 is a silicon switching diode array in an SOT-23 package. It features dual series configuration with a maximum reverse voltage of 100 V and continuous forward current of 200 mA. The device supports non-repetitive peak surge currents up to 4.5 A at 1 µs. Electrical characteristics include a maximum reverse recovery time of 4 ns, total power dissipation of 330 mW, and junction temperature range from -65 °C to 150 °C.
Verify the component status as End-of-Life (EOL) through official Infineon channels before finalizing procurement plans. Confirm that the specific HTSA1 suffix corresponds to the required packaging format and ensure compliance with RoHS directives. Cross-reference the datasheet revision date to validate technical parameters against current manufacturing specifications.
Select this component for designs requiring robust automotive-grade reliability and fast switching speeds within a compact surface-mount footprint. Ensure thermal management strategies accommodate the specified power dissipation limits. Verify that the 100 V reverse voltage rating provides sufficient margin for the target circuit's operating conditions.
This part belongs to the SMBD7000/MMBD7000 series of silicon switching diode arrays manufactured by Infineon Technologies. The series is designed for applications demanding high-speed performance and low leakage currents. The MMBD variant specifically utilizes the SOT-23 package family for efficient board space utilization.
Consult official Infineon documentation for verified substitute part numbers. Generic cross-references may not match the specific AEC-Q101 qualification or electrical tolerances defined in the original datasheet.