MMBD7000LT1HTSA1

MMBD7000LT1HTSA1

$0.15
  • Description:DIODE ARRAY GP 100V 200MA SOT23
  • Series:-

SKU:cf42477fc7df Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY GP 100V 200MA SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 100 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

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MMBD7000LT1HTSA1

Overview

The Infineon MMBD7000LT1HTSA1 is a silicon switching diode array in an SOT-23 package. It features dual series configuration with a maximum reverse voltage of 100 V and continuous forward current of 200 mA. The device supports non-repetitive peak surge currents up to 4.5 A at 1 µs. Electrical characteristics include a maximum reverse recovery time of 4 ns, total power dissipation of 330 mW, and junction temperature range from -65 °C to 150 °C.

Feature Summary

  • Dual series configuration for high-speed switching applications
  • Low capacitance and fast reverse recovery characteristics
  • Qualified according to AEC-Q101 automotive standards

Applications

  • High-speed switching circuits
  • Automotive electronics systems
  • General purpose signal processing

Procurement Notes

Verify the component status as End-of-Life (EOL) through official Infineon channels before finalizing procurement plans. Confirm that the specific HTSA1 suffix corresponds to the required packaging format and ensure compliance with RoHS directives. Cross-reference the datasheet revision date to validate technical parameters against current manufacturing specifications.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability and fast switching speeds within a compact surface-mount footprint. Ensure thermal management strategies accommodate the specified power dissipation limits. Verify that the 100 V reverse voltage rating provides sufficient margin for the target circuit's operating conditions.

Part Context

This part belongs to the SMBD7000/MMBD7000 series of silicon switching diode arrays manufactured by Infineon Technologies. The series is designed for applications demanding high-speed performance and low leakage currents. The MMBD variant specifically utilizes the SOT-23 package family for efficient board space utilization.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Generic cross-references may not match the specific AEC-Q101 qualification or electrical tolerances defined in the original datasheet.

MMBD7000LT1HTSA1MMBD7000LT1HTSA1
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