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The MMBD7000LT3G is a dual switching diode from onsemi, housed in an SOT-23 package. It features a reverse voltage of 100 V and a forward current of 200 mA per diode. The device has a peak reverse recovery time of 4 ns and a maximum forward voltage of 1.1 V at 100 mA. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix (e.g., LT3G vs LT1G) against official documentation to confirm reel quantity and packaging specifications. Ensure compliance with AEC-Q101 qualification if used in automotive contexts. Confirm RoHS and Pb-Free status matches project requirements.
Select this component for applications requiring fast switching speeds and low capacitance in a compact surface-mount package. Consider the 100 V reverse voltage rating and 200 mA continuous forward current limits when designing the circuit. Verify thermal dissipation capabilities based on the PCB substrate material.
This part belongs to the MMBD7000L family of dual switching diodes manufactured by onsemi. It is designed for high-speed switching applications where low reverse recovery time and small form factor are critical. The SOT-23 package provides a compact solution for space-constrained designs.
MMBD7000LT1G
The peak reverse recovery time is 4 ns.
Yes, it is AEC-Q101 qualified and PPAP capable.
The maximum operating junction temperature is +150°C.