SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MMBFJ201 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi, designed for low-level audio and general-purpose applications with high impedance signal sources. It operates within a drain-source voltage range of up to 40 V and dissipates a maximum power of 350 mW. The device features a gate-source breakdown voltage of 40 V and a typical cutoff voltage of 300 mV at 10 nA. Packaged in a surface-mount SOT-23-3 (TO-236-3/SC-59) case, it supports a junction temperature range from -55°C to 150°C.
Verify the specific ordering suffix against the manufacturer's current datasheet to ensure correct package and marking variants. Confirm RoHS compliance status through official material declarations. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when designing circuits requiring high input impedance and low noise characteristics for small signal processing. Ensure the operating voltage remains within the 40 V breakdown limit. Consider the thermal management requirements given the 350 mW power dissipation rating in the SOT-23-3 package.
The MMBFJ201 belongs to the J201-J202 / MMBFJ201-MMBFJ203 family of N-channel general-purpose amplifiers. These devices are sourced from Process 52 and are available in both TO-92 and SOT-23 packages. The MMBFJ201 specifically denotes the surface-mount variant intended for automated assembly processes.
MMBFJ202 serves as a functional substitute within the same family, sharing identical electrical ratings and pinout configuration while differing primarily in specific parameter tolerances.