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The MMBZ15VALT1G is a dual monolithic silicon Zener transient voltage suppressor in an SOT-23 package. It features a common anode configuration for protecting two separate lines. The device has a nominal breakdown voltage of 15 V with a 5% tolerance. Peak power dissipation is rated at 40 W for a 1.0 ms pulse. Maximum reverse leakage current is 50 nA at the working peak reverse voltage of 12 V. Clamping voltage reaches 12.3 V at a peak pulse current of 1.9 A. Operating temperature range spans from -55 °C to +150 °C.
Verify the specific ordering suffix to confirm reel size and packaging format. The standard T1 suffix indicates an 8 mm tape and 3,000 unit reel quantity. Confirm RoHS compliance status and lead-free marking requirements before finalizing procurement specifications.
Select this component when board space is limited and dual-line ESD protection is required. Ensure the working peak reverse voltage of 12 V aligns with the system's operational limits. Verify that the 40 W peak power rating is sufficient for the expected transient energy levels in the application environment.
This part belongs to the MMBZxxxALT1G series of dual common anode Zener diodes manufactured by onsemi. The series offers various breakdown voltages ranging from 5.6 V to 47 V in the same SOT-23 package style. These devices are designed for high-density PCB applications requiring robust transient suppression.
MMBZ15VALT1G is functionally equivalent to other parts in the MMBZxxxALT1G series with similar voltage ratings. Check datasheet electrical characteristics for exact clamping and leakage matches when substituting.