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The MMBZ20VALT1G is a dual monolithic silicon Zener diode in an SOT-23 package, designed for transient overvoltage and ESD protection. It features a common anode configuration allowing two separate unidirectional channels or one bidirectional channel within a single component. The device provides a nominal breakdown voltage of 20 V with a maximum clamping voltage of 28 V at a peak pulse current of 1.4 A. It handles a peak power dissipation of 40 W per junction under a 1.0 ms rectangular waveform. The unit operates within a temperature range of -55°C to +150°C and exhibits low leakage current.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tolerance specifications. Confirm that the required electrical parameters align with the target application's transient requirements before finalizing procurement decisions.
Select this component when board space is limited and dual-channel protection is required. Ensure the operating voltage remains below the working peak reverse voltage to prevent excessive leakage. Verify that the expected transient energy does not exceed the 40 W peak power limit defined by the specified pulse waveform.
This part belongs to the MMBZxxxALT1G series of dual Zener diodes manufactured by onsemi. The series utilizes a standard SOT-23 (CASE 318) footprint, facilitating automated assembly and high-density PCB layouts while providing robust protection capabilities for sensitive electronic circuits.
Direct replacements include other members of the MMBZxxxALT1G series with compatible breakdown voltages. Verify pinout compatibility and thermal characteristics when substituting with devices from different manufacturers.