MMBZ33VALT1G

Overview

The MMBZ33VALT1G is a dual monolithic silicon Zener transient voltage suppressor from onsemi, housed in an SOT-23 package. It features a common anode configuration to protect two separate lines within a single footprint. The device provides a nominal breakdown voltage of 33 V with a maximum clamping voltage of 46 V at a peak pulse current of 0.87 A. It handles a peak power dissipation of 40 W for a 1.0 ms pulse duration and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Dual junction common anode design enables protection of two independent signal lines using a single surface-mount package.
• High surge capability with 40 W peak power handling for transient overvoltage events.
• Robust electrostatic discharge (ESD) protection rated up to ±30 kV contact discharge per IEC61000-4-2.

Applications

• Computer interface protection
• Microprocessor bus protection
• Communication systems

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The standard 'ALT1' suffix indicates availability in an 8 mm tape and reel containing 3,000 units. Confirm that the component meets RoHS compliance standards and lead-free requirements before finalizing procurement specifications.

Selection Notes

Select this component when board space is limited but dual-line ESD protection is required. Ensure the working peak reverse voltage exceeds the system's operating voltage. Verify that the 40 W peak power rating aligns with the expected transient energy levels in the target application environment.

Part Context

This part belongs to the MMBZxxxALT1G series of dual common anode Zener diodes manufactured by onsemi. These devices are designed specifically for high-density PCB layouts where protecting multiple sensitive lines requires minimal footprint usage while maintaining robust transient suppression capabilities.

Replacement Considerations

MMBZ33VALT1G