MMBZ47VALT1G

MMBZ47VALT1G

$0.26
  • Description:DIODE ZENER ARRAY 47V SOT-23-3
  • Series:MMBZxxxALT1G

SKU:cfe8f8ed8e1d Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE ZENER ARRAY 47V SOT-23-3
  • Series:MMBZxxxALT1G
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Configuration:1 Pair Common Anode
  • Voltage - Zener (Nom) (Vz):47 V
  • Tolerance:±5%
  • Power - Max:300 mW
  • Impedance (Max) (Zzt):-
  • Current - Reverse Leakage @ Vr:50 nA @ 38 V
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • pa_package-case:
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Voltage - Forward (Vf) (Max) @ If:900 mV @ 10 mA

Download product information

MMBZ47VALT1G

Overview

The onsemi MMBZ47VALT1G is a dual monolithic silicon Zener transient voltage suppressor housed in an SOT-23 package. It features a common anode configuration, enabling the protection of two separate lines within a single component footprint. The device provides a nominal breakdown voltage of 47 V with a maximum clamping voltage of 54 V at a peak pulse current of 43.1 A. Rated for 40 W peak power dissipation during a 1.0 ms pulse, it offers robust ESD protection compliant with IEC61000-4-2 Level 4 standards. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

  • Dual junction common anode design protects two independent signal lines using a single compact package.
  • High surge capability rated at 40 W peak power dissipation for transient overvoltage events.
  • Provides superior electrostatic discharge (ESD) immunity meeting IEC61000-4-2 Level 4 contact discharge requirements.

Applications

  • Computer interface protection circuits
  • Microprocessor data and address bus protection
  • I/O port protection for business machines

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The standard 'ALT1' designation indicates availability in an 8 mm tape and reel format containing 3,000 units per reel. Confirm that the required variant matches the standard tolerance specifications provided in the electrical characteristics table before finalizing procurement orders.

Selection Notes

Select this component when board space is limited but dual-line protection is required. Ensure the working peak reverse voltage aligns with the system's operational limits. Verify that the 40 W peak power rating is sufficient for the expected transient energy levels in the target application environment.

Part Context

This part belongs to the MMBZxxxALT1G series of dual common anode Zener diodes manufactured by onsemi. The series utilizes a void-free, transfer-molded thermosetting plastic case designed for automated surface mount assembly. These devices are lead-free and RoHS compliant, intended for high-density PCB layouts requiring efficient ESD suppression.

Replacement Considerations

MMBZ47VTALT1G

FAQ

What is the pin configuration for the MMBZ47VALT1G?

The device uses a common anode configuration where Pin 3 serves as the shared Anode, while Pins 1 and 2 function as the Cathodes for the two independent Zener junctions.

How does the MMBZ47VALT1G handle bidirectional applications?

While designed as unidirectional components, the dual common anode structure allows them to be configured for bidirectional protection by connecting the cathodes to the respective signal lines and tying the anodes together.

MMBZ47VALT1GMMBZ47VALT1G
$0.26
Buy Now