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The onsemi MMBZ47VALT1G is a dual monolithic silicon Zener transient voltage suppressor housed in an SOT-23 package. It features a common anode configuration, enabling the protection of two separate lines within a single component footprint. The device provides a nominal breakdown voltage of 47 V with a maximum clamping voltage of 54 V at a peak pulse current of 43.1 A. Rated for 40 W peak power dissipation during a 1.0 ms pulse, it offers robust ESD protection compliant with IEC61000-4-2 Level 4 standards. Operating temperatures range from -55 °C to +150 °C.
Verify the specific ordering suffix to confirm packaging quantity. The standard 'ALT1' designation indicates availability in an 8 mm tape and reel format containing 3,000 units per reel. Confirm that the required variant matches the standard tolerance specifications provided in the electrical characteristics table before finalizing procurement orders.
Select this component when board space is limited but dual-line protection is required. Ensure the working peak reverse voltage aligns with the system's operational limits. Verify that the 40 W peak power rating is sufficient for the expected transient energy levels in the target application environment.
This part belongs to the MMBZxxxALT1G series of dual common anode Zener diodes manufactured by onsemi. The series utilizes a void-free, transfer-molded thermosetting plastic case designed for automated surface mount assembly. These devices are lead-free and RoHS compliant, intended for high-density PCB layouts requiring efficient ESD suppression.
MMBZ47VTALT1G
The device uses a common anode configuration where Pin 3 serves as the shared Anode, while Pins 1 and 2 function as the Cathodes for the two independent Zener junctions.
While designed as unidirectional components, the dual common anode structure allows them to be configured for bidirectional protection by connecting the cathodes to the respective signal lines and tying the anodes together.