MMBZ47VTALT1G

MMBZ47VTALT1G

$0.22
  • Description:DIODE ZENER ARRAY 47V SOT-23-3
  • Series:MMBZxxxALT1G

SKU:39af9aa44d1e Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ZENER ARRAY 47V SOT-23-3
  • Series:MMBZxxxALT1G
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Configuration:1 Pair Common Anode
  • Voltage - Zener (Nom) (Vz):47 V
  • Tolerance:±5%
  • Power - Max:300 mW
  • Impedance (Max) (Zzt):-
  • Current - Reverse Leakage @ Vr:50 nA @ 38 V
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • pa_package-case:
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Voltage - Forward (Vf) (Max) @ If:900 mV @ 10 mA

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MMBZ47VTALT1G

Overview

The MMBZ47VTALT1G is a dual monolithic silicon Zener transient voltage suppressor in an SOT-23 package. It features a common anode configuration for protecting two separate lines. The device has a nominal breakdown voltage of 47 V with a tight 2% tolerance. It operates within a junction temperature range of -55°C to +150°C and dissipates 225 mW of steady-state power at 25°C. Peak pulse power handling is rated at 40 W for a 1.0 ms duration. Maximum reverse leakage current is specified at 50 nA, and the clamping voltage reaches 54 V at a peak pulse current of 43.1 A.

Feature Summary

  • Dual common anode design protects two independent signal lines using a single compact package.
  • High ESD protection capability meeting IEC61000-4-2 Level 4 standards with ±30 kV contact discharge rating.
  • Tight 2% breakdown voltage tolerance ensures precise regulation for sensitive circuits.
  • Automotive-grade qualification compliant with AEC-Q101 standards.

Applications

  • Protection of high-voltage data buses in communication systems
  • ESD suppression on computer interface ports
  • Transient overvoltage protection for medical equipment

Procurement Notes

Verify the specific ordering suffix when sourcing components. The 'T1' suffix indicates a standard 3,000-unit tape and reel packaging format. Confirm that the required part includes the 'G' designation to ensure compliance with lead-free and RoHS manufacturing standards as defined by the manufacturer's current specifications.

Selection Notes

Select this component for applications requiring dual-channel protection with strict voltage accuracy. The 2% tolerance variant is suitable where standard 5% devices may cause circuit malfunction. Ensure the operating environment supports the specified thermal derating curves for sustained power dissipation above 25°C ambient temperature.

Part Context

This device belongs to the MMBZxxxALT1G series of dual Zener diodes manufactured by onsemi. The series utilizes a void-free transfer-molded thermosetting plastic case designed for automated board assembly. The product line offers various breakdown voltages ranging from 5.6 V to 47 V to accommodate different system requirements.

Replacement Considerations

MMBZ47VALT1G serves as a direct functional substitute with identical pinout and package but features a wider 5% voltage tolerance instead of the 2% tolerance found in the VT variant.

FAQ

What is the maximum non-repetitive surge power rating?

The device is rated for a peak pulse power dissipation of 40 W measured at a pulse width of 1.0 ms.

How does the common anode configuration function?

The internal structure connects the anodes of two separate Zener diodes together, allowing Pin 3 to serve as a common ground reference while Pins 1 and 2 protect distinct signal lines.

Is this component qualified for automotive use?

Yes, the device meets AEC-Q101 qualification standards and is PPAP capable, making it suitable for automotive and other demanding applications.

MMBZ47VTALT1GMMBZ47VTALT1G
$0.22
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