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The MMBZ5226BTW_R1_00001 is a surface mount silicon Zener diode from the Panjit MMBZ5221BTW to MMBZ5267BTW series. It features a nominal Zener voltage of 3.3 V with a tolerance range of 3.14 V to 3.47 V. The device provides 200 mW power dissipation at 25°C and utilizes an SOT-363 plastic case. Electrical characteristics include a maximum Zener impedance of 28 Ω at a test current of 20 mA, and a maximum reverse leakage current of 25 μA at 1.0 V. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the requested part number matches the exact electrical specifications required for the design. Ensure compliance with environmental directives relevant to the target market before finalizing procurement orders.
Select this component when a compact SOT-363 footprint is required for low-power voltage regulation. Verify that the 200 mW power dissipation rating meets the thermal requirements of the application. Check the 3.3 V nominal voltage and 28 Ω impedance values against circuit design constraints.
This part belongs to the MMBZ5221BTW to MMBZ5267BTW series manufactured by Panjit International Inc. The series covers Zener voltages from 2.4 V to 75 V in the SOT-363 package. The R1 suffix typically indicates reel packaging, consistent with the series' standard packing information.
Other parts within the MMBZ52xxBTW series share the same package and general features but differ in Zener voltage. Cross-referencing with other manufacturers requires verifying pinout compatibility and ensuring equivalent electrical parameters such as impedance and leakage current are met.
The marking code for the MMBZ5226BTW is D1.
The maximum reverse leakage current is 25 μA, measured at a reverse voltage of 1.0 V.
No, Panjit explicitly states these products are not designed or authorized for equipment requiring high levels of reliability, such as medical instruments.