SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MMBZ5230BTS-7-F is a triple surface mount Zener diode array manufactured by Diodes Incorporated. It integrates three isolated Zener diodes within an SOT-363 package, designed for automated assembly processes. The nominal Zener voltage is 4.7 V, with a range of 4.47 V to 4.94 V at a test current (IZT) of 20 mA. Maximum Zener impedance (ZZ) is 19 Ω, and maximum reverse leakage current (IR) is 5.0 µA at VR = 2.0 V. Power dissipation is rated at 200 mW, with a thermal resistance (RθJA) of 625 °C/W. Operating temperature ranges from -65°C to +150°C.
Verify the specific ordering suffix matches the required packaging configuration. Confirm compliance requirements such as RoHS and AEC-Q101 qualification align with project specifications. Ensure the SOT-363 footprint matches the design layout. Check for any recent product change notices that may affect marking or material composition.
Select this component when multiple independent voltage references are needed in a space-constrained environment. The triple configuration reduces board area compared to discrete components. Verify that the 200 mW power dissipation rating is sufficient for the intended operating conditions and ambient temperature derating curves.
This part belongs to the MMBZ5221BTS through MMBZ5259BTS series of triple Zener arrays. It shares the same SOT-363 mechanical outline and electrical testing methodology as other variants in the family, differing primarily in the specific Zener voltage ratings of the internal elements.
Direct replacements include other MMBZ5230BTS variants from Diodes Incorporated with identical electrical characteristics. Cross-manufacturer equivalents must match the SOT-363 package dimensions, 4.7V nominal voltage, and triple isolation configuration.
The product type marking code for the MMBZ5230BTS is KS1.
Yes, the device is qualified to AEC-Q101 standards for high reliability automotive applications.
The maximum reverse leakage current is 5.0 µA at a reverse voltage of 2.0 V.