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The onsemi MMBZ5V6ALT1G is a dual monolithic silicon Zener diode in an SOT-23 package, designed for transient overvoltage and ESD protection. It features a dual common anode configuration to protect two separate lines within one component. The device operates with a working peak reverse voltage of 3.0 V and a nominal breakdown voltage of 5.6 V (range 5.32 V to 5.88 V). It handles a maximum reverse peak pulse current of 3.0 A with a clamping voltage of 8.0 V at 24 W peak power. Key electrical parameters include a maximum leakage current of 5.0 µA at VRWM, a forward voltage of 0.9 V max at 10 mA, and a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix when purchasing. The 'T1' suffix indicates an 8 mm tape and reel containing 3,000 units. The 'T3' suffix denotes a 13 inch tape and reel with 10,000 units. Automotive qualified versions utilize the 'SZ' prefix and require PPAP documentation. Confirm RoHS compliance and Pb-free status as standard for this series.
Select this component for applications requiring dual-channel ESD suppression in space-constrained designs. Ensure the operating voltage does not exceed the 3.0 V working peak reverse voltage. Verify that the peak pulse power dissipation requirements align with the 24 W capability for voltages up to 9.1 V. Consider the SZ prefix if automotive qualification and unique site control are mandatory.
This part belongs to the MMBZxxxALT1G series of dual common anode Zener diodes. It shares the SOT-23 mechanical outline and general electrical characteristics with other voltages in the family, such as the MMBZ6V2ALT1G. The series is optimized for high-density PCB layouts where multiple protection channels are needed.
MMBZ5V6ALT3G offers identical electrical performance but comes in a 10,000-unit reel format. SZMMBZ5V6ALT1G provides the same specifications with added automotive qualification (AEC-Q101) and PPAP capability.