MMBZ5V6ALT1G

MMBZ5V6ALT1G

$0.16
  • Description:DIODE ZENER ARRAY 5.6V SOT-23-3
  • Series:MMBZxxxALT1G

SKU:584757085689 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ZENER ARRAY 5.6V SOT-23-3
  • Series:MMBZxxxALT1G
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Configuration:1 Pair Common Anode
  • Voltage - Zener (Nom) (Vz):5.6 V
  • Tolerance:±5%
  • Power - Max:300 mW
  • Impedance (Max) (Zzt):-
  • Current - Reverse Leakage @ Vr:5 µA @ 3 V
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • pa_package-case:
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Voltage - Forward (Vf) (Max) @ If:900 mV @ 10 mA

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MMBZ5V6ALT1G

Overview

The MMBZ5V6ALT1G is a dual monolithic silicon Zener transient voltage suppressor in an SOT-23 package. It features a common anode design to protect two separate lines. The device has a working peak reverse voltage of 3.0 V and a nominal breakdown voltage of 5.6 V. It handles a maximum reverse peak pulse current of 3.0 A with a clamping voltage of 8.0 V at that current. Peak power dissipation is 24 W for a 1.0 ms pulse. Maximum reverse leakage current is 5.0 µA at the working voltage. The component operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

  • Dual common anode configuration protects two independent signal lines using a single compact package.
  • Provides ESD protection rated at Class 3B (>16 kV) per Human Body Model and Level 4 (±30 kV) contact discharge per IEC61000-4-2.
  • Constructed with void-free, transfer-molded thermosetting plastic offering UL 94 V-0 flammability rating.

Applications

  • Computer interface protection
  • Microprocessor I/O and bus protection
  • Printer and business machine circuitry

Procurement Notes

Verify the specific ordering suffix when sourcing components. The standard 'T1' suffix indicates a 7-inch tape and reel containing 3,000 units. The 'T3' suffix denotes a 13-inch tape and reel containing 10,000 units. Ensure the required packaging format matches the production line specifications before finalizing orders.

Selection Notes

Select this component for applications requiring bidirectional or unidirectional ESD suppression on low-voltage data lines. The dual junction allows simultaneous protection of two circuits within limited board space. Verify that the 24 W peak power rating and 8.0 V clamping voltage are sufficient for the expected transient energy levels in the target system.

Part Context

This part belongs to the MMBZxxxALT1G series of Zener Transient Voltage Suppressors manufactured by onsemi. The series utilizes a dual monolithic silicon structure housed in an SOT-23 case. It serves as a cost-effective solution for protecting sensitive electronics from electrostatic discharge and transient overvoltage events.

Replacement Considerations

MMBZ5V6ALT3G: Identical electrical characteristics but supplied in a 10,000-unit 13-inch tape and reel instead of the 3,000-unit 7-inch reel.

FAQ

How does the common anode design function?

The device contains two internal Zener diodes sharing a common anode terminal. This allows Pin 3 to serve as the ground reference while Pins 1 and 2 act as independent cathodes to clamp voltage spikes on two separate lines.

What is the difference between unidirectional and bidirectional configurations?

Using one junction creates a unidirectional protector for DC lines. Using both junctions back-to-back creates a bidirectional protector suitable for AC or differential signal lines.

MMBZ5V6ALT1GMMBZ5V6ALT1G
$0.16
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