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The MMBZ5V6ALT3G is a dual monolithic silicon Zener diode in an SOT-23 package, designed for transient overvoltage and ESD protection. It features a common anode configuration protecting two separate lines. Key electrical parameters include a working peak reverse voltage (VRWM) of 3.0 V, a breakdown voltage (VBR) range of 5.32 V to 5.88 V at a test current of 20 mA, and a maximum clamping voltage (VC) of 8.0 V at a peak pulse current (IPP) of 3.0 A. The device handles a peak power dissipation of 24 W at 1.0 ms and offers low leakage current (< 5.0 µA).
Verify the ordering suffix carefully when sourcing. The 'T1' suffix indicates a 7-inch/3,000-unit tape and reel, while the 'T3' suffix denotes a 13-inch/10,000-unit tape and reel. Ensure the specific packaging quantity matches the production requirements before placing orders.
Select this component for applications requiring compact board space due to its small SOT-23 footprint. It supports either two separate unidirectional configurations or a single bidirectional setup. Verify that the 3.0 V working voltage aligns with the protected circuit's operating levels.
This part belongs to the MMBZxxxALT1G series, which includes various Zener breakdown voltages from 5.6 V to 47 V. The series provides options for both 24 W and 40 W peak power ratings depending on the specific voltage code selected within the family.
MMBZ5V6ALT1G serves as a direct functional equivalent with identical pinout and specifications but differs in reel packaging size (3,000 units vs. 10,000 units).
The T1 suffix corresponds to a 7-inch/3,000-unit tape and reel, whereas the T3 suffix corresponds to a 13-inch/10,000-unit tape and reel.
It allows the protection of two separate signal lines using a single package, which is ideal for saving board space in high-density applications.