MMBZ6V2ALT1G

Overview

The MMBZ6V2ALT1G is a dual monolithic silicon Zener diode designed for transient overvoltage protection in ESD-sensitive equipment. It features a common anode configuration within a SOT-23 package, allowing two separate unidirectional lines to be protected using a single component. The device operates with a working peak reverse voltage of 3 V and exhibits a breakdown voltage range from 5.89 V to 6.51 V at a test current of 1.0 mA. It handles a maximum reverse peak pulse current of 2.76 A, resulting in a clamping voltage of 8.7 V under these conditions. The unit supports a peak power dissipation of 24 W for a 1.0 ms pulse duration.

Feature Summary

• Dual junction common anode design enables protection of two independent signal lines within a compact footprint.
• Provides high-level electrostatic discharge protection rated at ±30 kV contact discharge per IEC61000-4-2 Level 4.
• Constructed with void-free transfer-molded thermosetting plastic offering UL 94 V-0 flammability rating.

Applications

• Computer interface protection circuits
• Printer and business machine I/O terminals
• Communication systems requiring transient suppression

Procurement Notes

Verify the specific ordering suffix when sourcing components. The standard 'T1' suffix indicates availability in 3,000-unit tape and reel packaging. Confirm that the requested part matches the required automotive or industrial qualification standards if applicable, as prefix variations may denote different manufacturing sites or control requirements.

Selection Notes

Select this component when board space is limited and dual-channel protection is required. Ensure the operating voltage does not exceed the 3 V working peak reverse voltage. Verify that the expected transient energy falls within the 24 W peak power dissipation limit for the specific pulse width involved in the application circuit.

Part Context

This device belongs to the MMBZxxxALT1G series of Zener Transient Voltage Suppressors manufactured by onsemi. The series utilizes a SOT-23 case style (CASE 318) to provide low leakage characteristics and high reliability. It serves as a compact alternative to discrete diode arrangements for protecting sensitive semiconductor components against voltage spikes.

Replacement Considerations

The MMBZ5V6ALT1G is a similar dual common anode TVS diode within the same series but features a lower breakdown voltage of 5.6 V nominal. Substitution requires verification that the system operating voltage remains below the replacement's working peak reverse voltage threshold.