MMD820-0805

RF Diode Overview

The MMD820-0805 is a silicon step recovery diode from the MMDx & SMMDx Series, manufactured by MACOM Technology Solutions Inc. It features a fully passivated true mesa construction and is housed in an 0805-2 ceramic package. Key electrical specifications at TA = 25°C include a voltage breakdown (VB) of 40 V minimum, total capacitance (CT) ranging from 1.0 pF to 1.7 pF, and carrier lifetime (t) between 30 ns and 60 ns. The typical transition time (tt) is 80 ps with a maximum of 100 ps. The device supports a rated forward current of 150 mA and operates within a temperature range of -65°C to +175°C.

RF Diode Feature Summary

• Features fully passivated true mesa construction for sharp transitions and improved stability
• Offers industry-fast transition times suitable for millimeter wave multiplication and picosecond pulse forming
• Available with screening per MIL-PRF-19500 and MIL-PRF-38534 standards

RF Diode Applications

• Millimeter wave frequency multiplication
• Picosecond pulse forming circuits
• High-speed switching applications requiring fast transition times

RF Diode Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm the exact package variant and any available military screening options. Confirm thermal derating requirements and mounting temperatures during integration planning. Ensure compliance with absolute maximum ratings for forward current and operating temperature ranges before finalizing procurement specifications.

RF Diode Selection Notes

Select this component when a low junction capacitance and rapid transition time are critical for high-frequency signal processing. The 0805-2 ceramic package provides robust mechanical support and thermal performance compared to plastic alternatives. Evaluate the trade-off between breakdown voltage and capacitance to ensure compatibility with the target circuit's reverse voltage requirements.

RF Diode Part Context

This part belongs to the MMDx & SMMDx series of silicon step recovery diodes designed for high-speed RF and microwave applications. The series encompasses various packages including chip, beam lead, ceramic, glass, and plastic configurations. The MMD820-0805 specifically utilizes a ceramic housing to maintain performance characteristics across a wide industrial and military temperature spectrum.

RF Diode Replacement Considerations

Direct replacements must match the 40V breakdown voltage, approximately 1.0-1.7pF capacitance, and sub-100ps transition time. Verify that alternative components support the same 0805-2 footprint and meet the required 150mA forward current rating without compromising thermal dissipation capabilities.

RF Diode FAQ

What is the typical transition time for the MMD820-0805?

The typical transition time is 80 ps, with a maximum specified limit of 100 ps under test conditions of IF = 10 mA and VR = 10 V.

What is the maximum operating temperature for this device?

The MMD820-0805 supports an operating and storage temperature range from -65°C to +175°C.

How is the total capacitance defined for this model?

Total capacitance (CT) is measured at a reverse voltage (VR) of 6 V and a frequency of 1 MHz, with values ranging from 1.0 pF to 1.7 pF.