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MMD830-0805 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SRD 25V 0805-2. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MMD830-0805
- Description：RF DIODE SRD 25V 0805-2
- Series：MMDx
- Mfr：MACOM Technology Solutions
- Package：Tray
- Diode Type：Step Recovery Diode
- Voltage - Peak Reverse (Max)：25V
- Current - Max：150 mA
- Capacitance @ Vr, F：1.06pF @ 6V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：-
- Operating Temperature：-65°C ~ 175°C
- Package / Case：0805 (2012 Metric)
- Supplier Device Package：0805-2
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MMD830-0805
RF Diode Overview
The MMD830-0805-2 is a silicon step recovery diode from the MMDx series, packaged in an EIA 0805-2 ceramic footprint. It features a minimum breakdown voltage of 25 V and a typical junction capacitance of 0.68 pF. The device exhibits a transition time ranging from 60 to 80 ps and a reverse recovery lifetime between 15 and 30 ns. Designed for millimeter-wave applications, it supports frequency cutoffs up to 700 GHz with a thermal resistance of 45 °C/W.
RF Diode Feature Summary
- Fully passivated true mesa construction ensures sharp transitions and improved stability.
- Industry-fastest transition times optimized for millimeter-wave multiplication and picosecond pulse forming.
- Available with screening per MIL-PRF-19500 and MIL-PRF-38534 standards.
RF Diode Applications
- Millimeter-wave frequency multiplication
- Picosecond pulse generation
- Harmonic generator circuits
RF Diode Procurement Notes
Verify the specific package suffix (e.g., -0805-2) against the required footprint dimensions. Confirm if military screening per MIL-PRF-19500 or MIL-PRF-38534 is required for the order. Ensure the forward current rating aligns with the circuit design limits.
RF Diode Selection Notes
Select this component when low junction capacitance and fast transition times are critical for high-frequency operation. Compare the 25 V breakdown voltage against the peak reverse voltage in the application. Consider the 0805-2 ceramic package for its thermal and mechanical properties in high-power scenarios.
RF Diode Part Context
This part belongs to the MMDx & SMMDx Series of silicon step recovery diodes. The series includes chip, beam lead, ceramic packaged, glass packaged, and plastic packaged variants. The MMD830 variant specifically targets applications requiring a balance of moderate breakdown voltage and ultra-fast switching characteristics.
RF Diode Replacement Considerations
Check datasheets for other MMD8xx series parts like MMD832 or MMD835 for different breakdown voltages. Verify compatibility with MMDB series beam lead diodes if space constraints differ. Ensure substitute parts match the required transition time and capacitance specifications.
RF Diode FAQ
What is the maximum operating temperature for the MMD830-0805-2?
The operating and storage temperature range is -65°C to +175°C.
How is the transition time measured for this ceramic packaged diode?
The transition time is tested with a forward current of 10 mA and a reverse voltage of 10 V.
What is the recommended mounting temperature for this component?
The peak mounting/bonding temperature should not exceed +260°C per JEDEC J-STD-20C.
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