MMD835-0805

RF Diode Overview

The MMD835-0805 is a silicon step recovery diode from the MMDx & SMMDx Series, packaged in an 0805-2 ceramic form factor. It features a minimum voltage breakdown of 15 V and a typical junction capacitance of 0.42 pF. The device exhibits a typical carrier lifetime of 10 ns and a transition time ranging from 50 to 70 ps. Operating within a temperature range of -65°C to +175°C, it supports a forward current rating of 150 mA for chip configurations.

RF Diode Feature Summary

• Features fully passivated true mesa construction for sharp transitions and improved stability
• Designed for millimeter wave multiplication and picosecond pulse forming applications
• Capable of generating output frequency combs extending beyond 40 GHz

RF Diode Applications

• Millimeter wave frequency multiplication
• Picosecond pulse generation circuits
• High-speed harmonic generation systems

RF Diode Procurement Notes

Verify the specific package suffix against official MACOM documentation to ensure compatibility with the intended PCB footprint. Confirm that the ordering suffix corresponds to the 0805-2 ceramic package variant rather than other available options like E28 or H20. Cross-reference the part number with the manufacturer's latest datasheet revision to validate electrical parameters before finalizing procurement orders.

RF Diode Selection Notes

Select this component when designing circuits requiring fast switching speeds and low parasitic capacitance for high-frequency signal processing. The 0805-2 package offers a compact solution suitable for dense board layouts. Ensure the drive conditions align with the specified test parameters to achieve the rated transition times and harmonic output performance.

RF Diode Part Context

This component belongs to the MMDx series of silicon step recovery diodes manufactured by MACOM Technology Solutions. The series includes various models differentiated by breakdown voltage and packaging styles, such as beam lead and plastic SMT options. The MMD835 specifically targets applications demanding rapid charge extraction and precise timing control.

RF Diode Replacement Considerations

Direct replacements include other MMD835 variants with different packages, such as MMD835-E28 or MMD835-H20. For chip-level integration, the MMD835-C11 serves as the bare die equivalent. Verify pinout and thermal characteristics when substituting between package types.