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The MMDT2222A-7-F is a dual NPN small signal transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction housed in an ultra-small SOT363 surface mount package. The device provides a collector-emitter breakdown voltage (BVCEO) of 40V and a continuous collector current (IC) of 600mA. Key electrical parameters include a collector-base breakdown voltage (BVCBO) of 75V, an emitter-base breakdown voltage (BVEBO) of 6.0V, and a maximum power dissipation (PD) of 200mW. The DC current gain (hFE) ranges from 35 to 100 depending on the operating conditions. The transition frequency (fT) is specified at 300MHz.
Verify the specific ordering suffix '-7-F' to confirm the reel size, tape width, and quantity per reel details match your manufacturing requirements. Ensure compliance with the stated environmental standards, including RoHS and halogen-free definitions, if required by your supply chain regulations. Cross-reference the marking code 'K1P' during incoming inspection to validate authenticity.
Select this component when a compact dual NPN solution is needed for medium power tasks. The SOT363 package offers significant board space savings compared to larger discrete packages. Consider the complementary PNP type, MMDT2907A, if a matched pair is required for push-pull or differential amplifier configurations.
This part belongs to the MMDT2222A series of dual NPN transistors produced by Diodes Incorporated under the DiodesZetex brand. It is specifically engineered as a small signal device suitable for general-purpose applications where low profile and high reliability are prioritized over high-power handling capabilities.
The datasheet explicitly identifies the MMDT2907A as the complementary PNP type. For direct functional replacement within a circuit design, verify that the substitute maintains identical pinout compatibility and meets the same absolute maximum ratings and thermal characteristics.