SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MMDT2222AHE3-TP is a dual NPN bipolar junction transistor (BJT) manufactured by Micro Commercial Components. It operates within a collector-emitter voltage range of 40V and a collector-base voltage of 75V, with an emitter-base voltage limit of 6V. The device supports a continuous collector current of 600mA and features a transition frequency of 250MHz. DC current gain ranges from a minimum of 100 to a maximum of 300 at specified test conditions. It is housed in a SOT-363-6 surface-mount package and is qualified under AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and variant selection. Confirm RoHS compliance status and halogen-free characteristics through the latest datasheet revision. Cross-reference the component with authorized distributor catalogs to validate current availability and lead times prior to procurement planning.
Select this component when a dual NPN topology is required in a space-constrained SOT-363 footprint. Ensure the design accommodates the 40V collector-emitter voltage rating and 600mA current limits. Verify that the 250MHz transition frequency meets the bandwidth requirements of the target application circuit.
This part belongs to the MMDT2222A series of dual NPN transistors produced by Micro Commercial Components. It shares functional similarities with other small-signal BJT arrays but is distinguished by its specific voltage ratings and automotive qualification. The HE3 suffix typically indicates environmental compliance features such as halogen-free composition.
Potential substitutes include the MMDT2222A-TP-HF or MMDT2222A-7. Verify pinout compatibility and electrical parameter equivalence before implementation.