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The MMDT2222V-7 is a dual NPN small signal transistor manufactured by Diodes Incorporated, housed in an SOT-563 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 40 V and a collector-base breakdown voltage (BVCBO) of 75 V. The device supports a maximum continuous collector current of 600 mA with a power dissipation rating of 150 mW at 25°C ambient temperature. Its current gain-bandwidth product (fT) reaches 300 MHz, suitable for medium power amplification and switching applications. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the standard reel quantity of 3,000 units per 8 mm tape width. Confirm that the 'KAT' marking code aligns with the required production date codes for your assembly timeline. Ensure compliance with J-STD-020 moisture sensitivity level 1 handling requirements during storage and soldering processes.
Select this component when a dual NPN configuration is required in an SOT-563 footprint. The MMDT2907V serves as the complementary PNP type if a push-pull or complementary pair topology is needed. Consider the 150 mW thermal limit and 833 °C/W thermal resistance for adequate heat dissipation on FR4 PCB layouts.
This part belongs to the MMDT2222 series of dual NPN transistors from Diodes Incorporated. It shares similar electrical characteristics with other variants like the MMDT2222A but utilizes the SOT-563 package instead of the SOT-363. The series is engineered for general-purpose small-signal applications requiring compact packaging and robust performance.
The MMDT2907V is the documented complementary PNP type within the same family. Direct pin-compatible replacements from other manufacturers are not explicitly listed in the official datasheet; verify equivalent specifications such as BVCEO, IC, and package dimensions before substitution.