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The MMDT2222V-TP is a dual NPN bipolar junction transistor (BJT) array manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in an SOT-563 surface-mount package. The device supports a maximum collector current of 600 mA and features a collector-emitter voltage rating of 40 V, with a collector-base voltage of 75 V and an emitter-base voltage of 6 V. Key electrical characteristics include a transition frequency of 300 MHz, a power dissipation capacity of 150 mW, and a DC current gain minimum of 100 at 150 mA and 10 V. The component operates within a temperature range of -55°C to +150°C.
Verify the specific manufacturer part number against official Micro Commercial Components documentation to ensure authenticity. Confirm that the SOT-563 package type matches the design requirements. Check for RoHS compliance status through the manufacturer's datasheet or certification documents before integration into production.
Select this component when a dual NPN configuration is required in a low-profile SOT-563 footprint. Ensure the application demands a 40 V collector-emitter rating and 600 mA continuous current capability. Verify that the 150 mW power dissipation limit fits the thermal management strategy of the target system.
This component belongs to the MMDT2222 series of dual NPN transistors produced by Micro Commercial Components. It serves as a discrete semiconductor solution for small-signal applications, distinct from similar offerings by other manufacturers like Diodes Incorporated which may use different suffixes or packaging variations such as SOT-363.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing with equivalent dual NPN arrays in SOT-563 packages requires consulting official manufacturer substitution guides.