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Product Detailed Parameters
- Description：TRANS 2NPN 40V 600MA SOT-563
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：150mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The MMDT2222VQ-7 is a dual NPN small signal transistor manufactured by Diodes Incorporated in an SOT563 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 40 V and a maximum continuous collector current (IC) of 600 mA. The device has a power dissipation rating of 150 mW and operates within a temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 35 to 300, a transition frequency (fT) of 300 MHz, and a collector-base breakdown voltage (BVCBO) of 75 V.
Feature Summary
- Dual NPN configuration housed in an ultra-small SOT563 surface-mount package
- AEC-Q101 qualified for automotive applications with PPAP capability
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Medium power amplification circuits
- General-purpose switching applications
- Automotive electronic systems requiring specific change control
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS44337 Rev. 1-2. Confirm that the marking code matches KAT and the date code aligns with the manufacturing year. Ensure the ordering suffix corresponds to the standard 3,000-unit reel packaging format specified in the manufacturer's documentation.
Selection Notes
Select this component when a dual NPN configuration is required in a compact SOT563 footprint. The 40V rating and 600mA current capacity suit low-to-medium power tasks. Verify that the 150mW thermal dissipation limit meets the circuit requirements under expected ambient conditions and PCB copper coverage constraints.
Part Context
This part belongs to the MMDT2222 series of dual NPN transistors. It serves as the automotive-grade counterpart to the standard MMDT2222V-7, offering AEC-Q101 qualification and IATF16949 manufacturing certification. The complementary PNP type in this family is the MMDT2907VQ.
Replacement Considerations
The standard commercial version MMDT2222V-7 shares identical electrical specifications but lacks automotive qualification. Other dual NPN devices in the SOT563 package may be considered if voltage or current ratings are sufficient, though pinout compatibility must be verified.
FAQ
What is the ESD protection rating for the MMDT2222VQ?
The device provides electrostatic discharge protection rated at 4,000 V according to the Human Body Model (HBM) JEDEC Class 3A, and 400 V according to the Machine Model (MM) JEDEC Class C.
How does the hFE vary with collector current?
The DC current gain (hFE) ranges from a minimum of 35 at IC = 100µA to a maximum of 300 at IC = 150mA, measured at VCE = 10V.
Is the MMDT2222VQ suitable for high-temperature environments?
Yes, the device is rated for operation and storage temperatures ranging from -55°C to +150°C.
