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The MMDT2907AHE3-TP is a dual PNP small-signal bipolar junction transistor manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in an SOT-363-6 surface-mount package. The device supports a maximum DC collector current of 600 mA with a collector-emitter breakdown voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 60 V. The emitter-base reverse voltage (VEBO) is rated at 5 V. Key electrical characteristics include a transition frequency (fT) of 200 MHz, a collector-emitter saturation voltage of 1.6 V, and a power dissipation capability of 200 mW. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix HE3 indicates lead-free compliance and automotive qualification status against the manufacturer's official datasheet. Confirm the SOT-363 pinout matches the target PCB footprint design. Ensure the ordering quantity aligns with the standard reel packaging specifications provided by the supplier.
Select this component when a dual PNP topology is required in a minimal footprint. Compare the 200 mW power dissipation limit against thermal requirements. Verify that the 600 mA current rating exceeds the peak load demands of the application circuit.
This part belongs to the MMDT2907A series from Micro Commercial Components. It serves as the dual-transistor counterpart to the single MMST2907A-TP and the automotive-qualified single MMBT2907AHE3-TP. The HE3 suffix specifically denotes lead-free construction and AEC-Q101 certification.
MMDT2907A-TP: Identical electrical specifications but lacks AEC-Q101 automotive qualification.
The maximum power dissipation is 200 mW.
Yes, it is qualified according to the AEC-Q101 standard.
The transition frequency (fT) is 200 MHz.