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The MMDT2907V-TP is a dual PNP bipolar junction transistor (BJT) manufactured by Micro Commercial Components. It features a SOT-563-6 surface-mount package and operates with a maximum collector-emitter voltage of 60 V and a continuous collector current of 600 mA. The device has a power dissipation rating of 150 mW and a transition frequency of 200 MHz. It supports an operating temperature range from -55°C to +150°C, with a saturation voltage of 1.6 V at specified currents.
Verify the specific datasheet for the MMDT2907V-TP variant as it may differ from similar MCC part numbers like the MMDT2907A-TP. Confirm package dimensions and electrical parameters against official manufacturer documentation before integration. Ensure compliance with RoHS and REACH requirements for the target market.
Select this component when a dual PNP transistor is required in a small footprint. Compare the 150 mW power dissipation limit against thermal design requirements. Verify that the 60 V breakdown voltage meets circuit specifications. Consider the SOT-563-6 package compatibility with existing PCB layouts.
This part belongs to the MMDT2907 series of dual PNP transistors from Micro Commercial Components. It shares functional similarities with other dual BJT arrays but is distinguished by its specific packaging and electrical ratings. The 'V' suffix typically denotes a specific package or revision within the product line.
Direct substitutes include the MMDT2907A-TP and MMDT2907V-7. Verify pinout compatibility and electrical parameter equivalence before substitution. Cross-reference with Diodes Incorporated equivalents if sourcing flexibility is required.