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The MMDT3904-HF is a dual NPN bipolar junction transistor (BJT) manufactured by Comchip Technology. It integrates two independent NPN transistors within a single SOT-363 surface-mount package. The device supports a maximum continuous collector current of 200 mA and withstands a collector-emitter voltage of 40 V. Key electrical characteristics include a collector-base voltage rating of 60 V, an emitter-base voltage limit of 6 V, and a saturation voltage of 300 mV. Power dissipation is rated at 200 mW with a gain-bandwidth product of 300 MHz. The component operates reliably across a temperature range from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status directly with Comchip Technology prior to procurement. Ensure the selected variant matches the required SOT-363 footprint and pinout configuration for your PCB layout.
Select this component when a dual NPN configuration is required in a minimal surface-mount footprint. The 200 mA current rating suits low-to-medium power switching tasks. Verify that the 200 mW power dissipation limit accommodates the thermal design of the target application without requiring additional heatsinking.
This part belongs to the MMDT3904 series of dual bipolar transistors produced by Comchip Technology. It serves as a compact alternative to discrete single-transistor implementations, reducing board space and assembly complexity. The series is designed for general-purpose electronic applications requiring reliable NPN switching performance.
Direct substitutes include other dual NPN BJT packages such as the BC847DW or MMBT3904DW. Verify pin compatibility and electrical ratings before substitution. Ensure the replacement maintains the same SOT-363 form factor and thermal characteristics.