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The MMDT3904_R1_00001 is a dual NPN general-purpose switching transistor manufactured by Panjit International Inc. It utilizes an epitaxial silicon planar design housed in a plastic SOT-363 case. The device supports a collector-emitter voltage of 40V and a continuous collector current of 200mA, with a maximum power dissipation of 225mW at a junction temperature range of -55°C to 150°C. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 300 depending on the collector current, a collector-base breakdown voltage of 60V, and an emitter-base breakdown voltage of 6.0V. The component complies with EU RoHS 2.0 standards.
Verify the specific ordering suffix against official Panjit documentation to confirm packaging details and marking codes. Ensure that the received components match the specified SOT-363 package dimensions and terminal solderability requirements outlined in the datasheet. Confirm compliance with the stated environmental standards prior to integration into final assemblies.
Select this component when a dual NPN configuration is required in a space-constrained layout. The SOT-363 package offers a compact footprint suitable for high-density PCB designs. Consider the thermal resistance and power dissipation limits relative to the expected operating conditions and ambient temperatures of the target application environment.
This part number represents the Panjit International Inc. variant of the MMDT3904 dual NPN transistor. It shares core electrical specifications with industry-standard equivalents but utilizes Panjit-specific manufacturing processes and packaging configurations. The R1_00001 suffix indicates specific reel or tape-and-reel packaging attributes defined by the manufacturer.
Cross-reference with other manufacturers' dual NPN transistors in the SOT-363 package, such as the MBT3904DW1T1G, ensuring pinout compatibility and matching absolute rating parameters before substitution.