MMDT3904V-7

MMDT3904V-7

$0.28
  • Description:TRANS 2NPN 40V 200MA SOT-563
  • Series:-

SKU:f62a7ff5aec2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 40V 200MA SOT-563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:200mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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MMDT3904V-7

Overview

The MMDT3904V-7 is a dual NPN small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an ultra-small SOT-563 package. The device supports a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 60 V, and a continuous collector current (IC) of 200 mA. Power dissipation is rated at 200 mW with a thermal resistance of 625 °C/W. Operating and storage temperatures range from -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 300 depending on the collector current, a current gain-bandwidth product (fT) of 300 MHz, and switching times including a delay time of 35 ns and a fall time of 50 ns.

Feature Summary

  • Dual NPN configuration within an ultra-small SOT-563 surface mount package
  • Epitaxial planar die construction for reliable performance
  • Designed for low power amplification and switching applications

Applications

  • Low power amplification circuits
  • General purpose switching applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard tape and reel packaging containing 3000 units per reel. Confirm that the component marking 'KAP' matches the intended part number during incoming inspection. Ensure compliance with RoHS directives and verify the date code if green molding compound usage is required for the specific project specifications.

Selection Notes

Select this component when a compact dual NPN solution is required for space-constrained designs. The SOT-563 package offers a smaller footprint compared to traditional discrete transistors while maintaining similar electrical ratings. Consider the 200 mW power dissipation limit and the 625 °C/W thermal resistance when designing the PCB layout to ensure adequate heat dissipation under continuous operation conditions.

Part Context

This component belongs to the MMDT3904 series of dual NPN transistors produced by Diodes Incorporated. It shares core electrical characteristics with other variants in the family but differs primarily in its physical packaging and specific ordering suffixes. The SOT-563 package distinguishes it from single-transistor counterparts like the MMBT3904 or dual PNP variants like the MMDT3906.

Replacement Considerations

Direct pin-compatible replacements within the same manufacturer's lineup may include other MMDT3904 variants with different packaging options. Verify that any substitute maintains the SOT-563 form factor and meets the 40 V VCEO and 200 mA IC requirements.

MMDT3904V-7MMDT3904V-7
$0.28
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