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The MMDT3906V-7 is a dual PNP small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an SOT-563 package. The device supports a maximum collector-emitter voltage (VCEO) of -40 V and a continuous collector current (IC) of -200 mA. Power dissipation is rated at 150 mW at 25°C ambient temperature, with a thermal resistance (RθJA) of 833 °C/W. The gain-bandwidth product (fT) reaches 250 MHz. Operating and storage temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format. Confirm that the component meets the required AEC-Q101 qualification standards if intended for automotive use. Ensure the SOT-563 footprint matches the PCB layout guidelines provided in the manufacturer's suggested pad layout document AP02001.
Select this component when a dual PNP transistor is required in a compact SOT-563 form factor. It serves as a suitable alternative to single PNP transistors where space is constrained. Consider the 150 mW power dissipation limit and the -40 V voltage rating during circuit design. Verify compatibility with the -55°C to +150°C operating temperature range for the target environment.
This part belongs to the MMDT39 series of dual PNP small signal transistors produced by Diodes Incorporated. It shares the same electrical characteristics and package type as the MMDT3906 but includes the 'V' designation indicating specific manufacturing or revision details. The device is designed for general-purpose low-power applications requiring high density on printed circuit boards.
Direct substitutes include the MMDT3906 and MMDT3906W-7-F, which share identical electrical ratings and the SOT-563 package. Verify pinout compatibility and marking codes before substitution. Other dual PNP transistors in the SOT-563 package may be considered if their electrical parameters meet or exceed the -40 V and -200 mA limits.