MMDT3906V-7

MMDT3906V-7

$0.07
  • Description:TRANS 2PNP 40V 200MA SOT-563
  • Series:-

SKU:6a5724c52766 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 40V 200MA SOT-563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:150mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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MMDT3906V-7

Overview

The MMDT3906V-7 is a dual PNP small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an SOT-563 package. The device supports a maximum collector-emitter voltage (VCEO) of -40 V and a continuous collector current (IC) of -200 mA. Power dissipation is rated at 150 mW at 25°C ambient temperature, with a thermal resistance (RθJA) of 833 °C/W. The gain-bandwidth product (fT) reaches 250 MHz. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

  • Dual PNP configuration within an ultra-small SOT-563 surface mount package
  • Epitaxial planar die construction for high reliability
  • Qualified to AEC-Q101 standards for automotive applications
  • Lead-free design compliant with RoHS directives

Applications

  • Low power amplification circuits
  • General purpose switching applications
  • Automotive electronic systems requiring high reliability components

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format. Confirm that the component meets the required AEC-Q101 qualification standards if intended for automotive use. Ensure the SOT-563 footprint matches the PCB layout guidelines provided in the manufacturer's suggested pad layout document AP02001.

Selection Notes

Select this component when a dual PNP transistor is required in a compact SOT-563 form factor. It serves as a suitable alternative to single PNP transistors where space is constrained. Consider the 150 mW power dissipation limit and the -40 V voltage rating during circuit design. Verify compatibility with the -55°C to +150°C operating temperature range for the target environment.

Part Context

This part belongs to the MMDT39 series of dual PNP small signal transistors produced by Diodes Incorporated. It shares the same electrical characteristics and package type as the MMDT3906 but includes the 'V' designation indicating specific manufacturing or revision details. The device is designed for general-purpose low-power applications requiring high density on printed circuit boards.

Replacement Considerations

Direct substitutes include the MMDT3906 and MMDT3906W-7-F, which share identical electrical ratings and the SOT-563 package. Verify pinout compatibility and marking codes before substitution. Other dual PNP transistors in the SOT-563 package may be considered if their electrical parameters meet or exceed the -40 V and -200 mA limits.

MMDT3906V-7MMDT3906V-7
$0.07
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