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The MMDT3906V-TP is a dual PNP bipolar junction transistor (BJT) array manufactured by Micro Commercial Components. It integrates two independent PNP transistors within a single SOT-363 surface-mount package. The device supports a maximum collector-emitter voltage of -40 V and a continuous collector current of 200 mA. Key electrical characteristics include a DC current gain ranging from 100 to 300, a transition frequency of 250 MHz, and a power dissipation rating of 200 mW. It operates reliably across a temperature range of -55°C to +150°C.
Verify the specific suffix 'V' against official MCC documentation to confirm pinout compatibility and electrical tolerances relative to standard variants. Ensure the selected packaging format matches production requirements. Cross-reference with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a dual PNP configuration is required in a compact footprint. Compare the 200 mA current limit and 40 V voltage ratings against circuit demands. Consider the SOT-363 thermal characteristics for heat dissipation needs. Verify that the AEC-Q101 qualification meets specific industry reliability standards.
This part belongs to the MMDT3906 series of dual PNP small-signal transistors. It shares core specifications with the MMDT3906-TP but may feature distinct packaging or qualification markings indicated by the suffix. It serves as a compact solution for replacing discrete dual-transistor setups in modern electronics.
The MMDT3906-TP is a confirmed substitute within the same product family. Verify pinout alignment and electrical parameter equivalence before implementation. Other generic SOT-363 dual PNP transistors may require schematic review due to potential pin configuration differences.