SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MMDT4403-7-F is a dual PNP small signal surface mount transistor manufactured by Diodes Incorporated. It features epitaxial planar die construction within an SOT-363 package. The device supports a maximum collector current of -600 mA and a power dissipation of 200 mW at 25°C. Key electrical ratings include a collector-base voltage of -40 V, a collector-emitter voltage of -40 V, and an emitter-base voltage of -5.0 V. The component operates across a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the requested quantity aligns with the standard shipping format of 3000 units per tape and reel. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.
Select this component for designs requiring two independent PNP transistors in a compact footprint. Evaluate thermal resistance characteristics when determining heat dissipation needs on FR-4 PCBs. Verify that the operating voltage and current limits accommodate the specific circuit requirements.
This part belongs to the MMDT4403 series of dual PNP transistors from Diodes Incorporated. It utilizes the SOT-363 case style, which is also known as SC-88. The marking code K2T identifies the product type on the component body.
Consult official datasheets for compatible alternatives such as the MMBT4403 single transistor or other dual PNP variants like the MMDT2222A. Verify pinout compatibility and electrical specifications before substitution.
The maximum combined power dissipation is 200 mW at an ambient temperature of 25°C.
The DC current gain (hFE) ranges from 30 to 300 depending on the collector current and test conditions.
Yes, the device is lead-free and RoHS compliant, featuring matte tin finish plating over an Alloy 42 leadframe.