SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MMDT4403-7 is a dual PNP small-signal surface mount transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction housed in an SOT-363 package. The device supports a maximum collector current of -600 mA and a power dissipation of 200 mW at 25°C. Key electrical ratings include a collector-base voltage (VCBO) of -40 V, a collector-emitter voltage (VCEO) of -40 V, and an emitter-base voltage (VEBO) of -5.0 V. The component operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the requested part number matches the exact manufacturer specifications before finalizing procurement actions.
Select this component for designs requiring dual PNP transistors in a compact footprint. Ensure the circuit requirements align with the specified voltage limits and thermal characteristics for optimal operation.
This component belongs to the MMDT4403 series of dual PNP small signal transistors. It is designed for surface mount technology applications where space efficiency and low power consumption are critical design parameters.
Consult official substitution lists or datasheets for verified equivalent components from other manufacturers if availability is constrained.
The maximum power dissipation is 200 mW when mounted on an FR-4 PCB at an ambient temperature of 25°C.
The DC current gain (hFE) ranges from a minimum of 30 to a maximum of 300, depending on the collector current and test conditions.