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The MMDT5401Q-7-F is a dual PNP small signal transistor in an SOT363 package, designed for automotive applications. It features a collector-emitter voltage of -150V and continuous collector current of -200mA. The device operates within a temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 50 to 240 at IC = -10mA, and a current gain-bandwidth product (fT) up to 300MHz. It meets AEC-Q101 standards and is RoHS compliant.
Verify the specific ordering suffix '-7-F' corresponds to the 3,000 units per reel configuration on 8-inch tape. Confirm the marking code 'K4M' matches the required identification for production integration. Ensure compliance with PPAP requirements if mandated by the specific automotive customer specification.
Select this component when a dual PNP configuration is required in a compact SOT363 surface mount package. Consider the -150V collector-emitter voltage rating for higher voltage switching applications. Verify that the thermal resistance and power dissipation limits suit the intended PCB layout and ambient operating conditions.
This part is part of Diodes Incorporated's automotive-grade bipolar junction transistor portfolio. It serves as the PNP counterpart to the complementary NPN type MMDT5551Q. The device is specifically engineered to meet stringent automotive reliability standards while maintaining a small form factor suitable for dense circuit board layouts.
The datasheet identifies the MMDT5551Q as the complementary NPN type available from the same manufacturer. No other direct substitute part numbers are explicitly listed in the provided documentation.