MMDT5451-7

Overview

The MMDT5451-7 is a complementary NPN/PNP small-signal transistor array manufactured by Diodes Incorporated. It integrates one 5551-type NPN and one 5401-type PNP transistor in an SOT363 surface-mount package. The device features a maximum continuous collector current of 200 mA for both sections. Voltage ratings include a collector-emitter breakdown voltage (BVCEO) of 160 V for the NPN section and 150 V for the PNP section, with a collector-base breakdown voltage (BVCBO) of 180 V and 160 V respectively. The unit supports a power dissipation of 200 mW at 25°C ambient temperature and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Complementary pair configuration integrating one NPN and one PNP transistor
• Qualified to AEC-Q101 standards for high reliability applications
• Totally lead-free and fully RoHS compliant construction
• Ultra-small surface mount package design

Applications

• Medium power amplification circuits
• General purpose switching applications
• Automotive electronics systems

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the ordering suffix matches the specific packaging requirements, such as reel size and quantity per reel. Ensure compliance with environmental directives including RoHS 3 and REACH regulations before finalizing procurement specifications.

Selection Notes

Select this component when space-constrained designs require a matched complementary pair in a single package. Evaluate thermal resistance parameters against the intended PCB copper area and airflow conditions. Verify that the required collector-emitter voltage ratings accommodate the peak operating voltages of the target circuit application.

Part Context

This part belongs to the MMDT5451 series of complementary bipolar junction transistors. It utilizes epitaxial planar die construction to ensure consistent electrical performance across manufacturing batches. The product line is designed to provide reliable operation in compact electronic assemblies requiring dual-transistor functionality.

Replacement Considerations

MMDT5451Q-7

FAQ

What are the DC current gain (hFE) minimums for the NPN section?

The minimum hFE is 80 at IC = 1.0mA and 80 at IC = 10mA, both measured at VCE = 5.0V.

Is the MMDT5451 suitable for life support devices?

No, Diodes Incorporated products are not authorized for use as critical components in life support devices without express written approval from the Chief Executive Officer.

What is the maximum collector-base breakdown voltage for the NPN section?

The maximum collector-base breakdown voltage (BVCBO) for the NPN section is 180 V, tested at IC = 100µA with IE = 0.