MMDT5451HE3-TP

MMDT5451HE3-TP

$0.08
  • Description:TRANS NPN/PNP 160V/150V SOT363
  • Series:-

SKU:94293ea1afd9 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS NPN/PNP 160V/150V SOT363
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):160V, 150V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • Power - Max:200mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

MMDT5451HE3-TP

Overview

The MMDT5451HE3-TP is a dual bipolar junction transistor (BJT) array manufactured by Micro Commercial Components. It integrates one NPN and one PNP transistor within a single SOT-363 surface-mount package. The device supports a maximum collector current of 200mA with a power dissipation rating of 200mW. Electrical characteristics include a collector-emitter breakdown voltage of 160V for the NPN element and 150V for the PNP element. The transition frequency reaches 300MHz, ensuring suitability for high-speed switching applications. The component operates across a junction temperature range of -55°C to +150°C.

Feature Summary

  • Dual configuration combining NPN and PNP transistors in a compact SOT-363 footprint
  • High-voltage capability with 160V and 150V collector-emitter breakdown ratings
  • RoHS compliant construction utilizing lead-free finish

Applications

  • General-purpose switching circuits
  • Low-power amplification stages
  • Digital logic interface buffers

Procurement Notes

Verify the specific manufacturer part number against official Micro Commercial Components documentation to confirm pinout compatibility and electrical tolerances before integration. Ensure that the ordering suffix corresponds to the required packaging format and compliance standards. Cross-reference datasheet revisions to validate current manufacturing status and material specifications.

Selection Notes

Select this component when a dual BJT array is required in a minimal surface-mount package. The SOT-363 form factor provides space efficiency for dense PCB layouts. Consider the 200mA current limit and 200mW power dissipation constraints during thermal design. Verify that the 300MHz transition frequency meets the signal processing requirements of the target application.

Part Context

This component belongs to the MMDT5451 series of dual transistor arrays. It serves as a compact solution for replacing discrete NPN and PNP pairs in circuit designs. The series is characterized by its small outline package and standardized electrical parameters suitable for consumer electronics and industrial control systems requiring reliable switching performance.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult official distributor databases or manufacturer cross-reference tools to identify equivalent components from other suppliers based on matching electrical specifications and package dimensions.

MMDT5451HE3-TPMMDT5451HE3-TP
$0.08
Buy Now