MMDT5551-TP

Overview

The MMDT5551-TP is a dual NPN bipolar junction transistor (BJT) array manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 160V and a collector-base breakdown voltage of 180V. The device supports a maximum continuous collector current of 600mA and dissipates up to 200mW of power. Key electrical characteristics include a DC current gain (hFE) of at least 100 at 10mA and 5V, with a transition frequency of 300MHz. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-363 package.

Feature Summary

• Dual NPN configuration in a compact SOT-363 surface-mount package
• High voltage capability with 160V collector-emitter breakdown
• AEC-Q101 qualified for automotive reliability standards
• Lead-free and halogen-free construction compliant with RoHS directives

Applications

• Automotive electronic circuits requiring AEC-Q101 compliance
• General-purpose switching and amplification applications
• Digital logic interface circuits
• Low-power signal processing modules

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm environmental compliance status, such as halogen-free availability. Ensure that the selected variant matches the required packaging format, typically tape and reel or cut tape, for automated assembly processes. Cross-reference the part number with the latest datasheet revision to confirm pinout consistency and electrical specifications before integration into production designs.

Selection Notes

Select the MMDT5551-TP when a dual NPN configuration is required with high voltage tolerance up to 160V. This component is suitable for designs needing AEC-Q101 qualification for automotive environments. Compare its 300MHz transition frequency and 200mW power dissipation against single-transistor alternatives to determine if the dual package offers sufficient space savings and performance for the target application constraints.

Part Context

This component belongs to the Micro Commercial Components BJT array series, specifically designed as complementary or dual configurations for efficient circuit layout. The MMDT5551-TP serves as a dual NPN solution, distinct from PNP or complementary NPN/PNP pairs like the MMDT5451. It utilizes the SOT-363 footprint to provide two independent transistors in a minimal surface-mount area, supporting modern miniaturization trends in consumer and industrial electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with direct replacements such as the MMDT5551HE3, noting that suffix changes may indicate variations in halogen-free status or packaging rather than functional differences. Always consult the manufacturer's cross-reference guide for validated alternatives.