SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MNS2N2222AUB is a silicon NPN small-signal bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector current of 800 mA and a collector-emitter breakdown voltage of 50 V. The device dissipates up to 500 mW of power and operates within a temperature range of -65°C to +200°C TJ. Packaged in the UB surface-mount format, it provides a minimum DC current gain of 100 at specified test conditions.
Verify that the specific ordering suffix matches the required qualification level, as standard commercial variants differ from military specifications. Confirm package integrity upon receipt to ensure hermetic seals remain uncompromised during transit. Cross-reference the manufacturer datasheet against agency specifications to resolve any potential discrepancies regarding performance limits or testing requirements.
Select this component when high-temperature operation and radiation hardness are critical design constraints. The UB package facilitates automated surface-mount assembly while maintaining robust electrical characteristics. Ensure thermal management strategies account for the 500 mW dissipation limit within the intended enclosure environment.
This part belongs to the 2N2222 family of NPN transistors produced by Microchip Technology. It serves as a specialized variant optimized for harsh environments where standard commercial semiconductors would fail. The device complements other high-reliability discrete components within the manufacturer's portfolio for defense and space projects.
Public confirmed substitute part numbers: JAN2N2222AUB, JANSD2N2222AUBC/TR.