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MOC8103XSMT&R is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Isocom Components 2004 LTD. Its product description is OPTOISOLATOR 5.3KV 1CH TRANS. Review the specifications below when checking this part for your BOM.
The MOC8103XSMT&R is a surface-mount optocoupler manufactured by Isocom Components. It features a single channel with a gallium arsenide infrared LED coupled to a silicon phototransistor in a six-pin DIP package. The device provides electrical isolation with a maximum isolation voltage of 5300 Vrms. Key electrical parameters include a maximum forward voltage of 1.5 V, a maximum collector-emitter breakdown voltage of 70 V, and a typical current transfer ratio of 50%. The unit operates within a temperature range of -55 °C to 100 °C.
Verify the specific suffix 'SMT&R' confirms the surface-mount tape-and-reel packaging configuration rather than standard tube packaging. Confirm compliance with RoHS directives and check for UL or VDE recognition markings if required for end-product certification. Ensure the supplier source matches Isocom Components specifications for the XSMT&R variant.
Select this component when a surface-mount solution is required for isolated switching applications. The absence of a phototransistor base lead reduces coupled capacitance, making it suitable for noise-sensitive environments. Verify that the 50% typical current transfer ratio meets the drive requirements of the downstream circuitry compared to alternatives with wider CTR windows.
This part belongs to the MOC810x series of non-base-lead optoisolators. These devices are engineered specifically for power supply applications where low noise and predictable gain are critical. The series utilizes closely matched current transfer ratios to minimize unit-to-unit variation, ensuring consistent performance across production batches.
Compatible substitutes include the MOC8101, MOC8102, MOC8104, and MOC8105 from various manufacturers. When replacing, ensure the substitute maintains the six-pin DIP form factor and the no-base-lead phototransistor architecture to preserve noise immunity characteristics.
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