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MP18021HN-A-LF-P
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 8SOIC
- Series：MP
- Mfr：Monolithic Power Systems Inc.
- Package：Tape & Reel (TR)
- Driven Configuration：Half-Bridge
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：9V ~ 16V
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：2.5A, 2.5A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：12ns, 9ns
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package：8-SOIC-EP
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：100 V
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Overview
The MP18021HN-A-LF-P is a high-frequency half-bridge gate driver designed for N-channel power MOSFETs. It features a 100V VBST voltage range and an integrated bootstrap diode to minimize external component count. The device supports independent control of high-side and low-side channels with matched propagation delays under 5ns. Operating from a 9V to 18V supply, it delivers 2.5A peak output current. Typical rise and fall times are 12ns and 9ns respectively at 12V VDD driving a 1nF load. It includes UVLO protection and operates within a -40°C to +125°C temperature range in an SOIC-EP-8 package.
Feature Summary
- High-frequency half-bridge configuration with independent channel control
- Integrated bootstrap diode reduces external bill of materials
- TTL compatible inputs with low static current consumption
- Under-voltage lockout protects against insufficient power supply conditions
Applications
- Motor drive systems requiring precise timing
- Power factor correction circuits
- DC-DC converter topologies using N-channel MOSFETs
- Industrial motor control applications
Procurement Notes
Verify the specific suffix 'A' against official Monolithic Power Systems documentation to confirm pin compatibility and electrical specifications relative to standard variants. Ensure the SOIC-EP-8 package thermal pad connection requirements are met in the PCB layout design. Confirm RoHS compliance status through the manufacturer's environmental declaration before finalizing procurement orders.
Selection Notes
Select this component when driving N-channel MOSFETs in half-bridge configurations requiring high switching speeds. The integrated bootstrap diode simplifies design compared to discrete solutions. Ensure the application voltage stays within the 9V to 18V supply range. Consider the 100V VBST rating for high-side switching capabilities. Verify that the 2.5A output current meets the gate charge requirements of the target MOSFETs.
Part Context
This part belongs to the MP18021 series of high-frequency gate drivers from Monolithic Power Systems. It is specifically engineered for applications demanding fast switching and tight delay matching between high-side and low-side outputs. The series supports various packaging options including QFN and SOIC formats to accommodate different thermal and space constraints in modern power electronics designs.
Replacement Considerations
Direct substitutes include MP18021HN-LF-P and MP18021HN-LF-Z. These variants share identical electrical characteristics and pinouts but differ in reel quantity or tape-and-reel specifications. Verify package compatibility and ensure the substitute maintains the same 100V VBST rating and UVLO thresholds.
