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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:Monolithic Power Systems Inc.
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 18V
- Logic Voltage - VIL, VIH:1V, 2.4V
- Current - Peak Output (Source, Sink):2.5A, 2.5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):12ns, 9ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package:8-SOICE
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):100 V
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Overview
The MP18021HN-A-LF is a high-frequency half-bridge gate driver designed for N-channel power MOSFETs. It operates with a supply voltage range of 9 V to 18 V and supports a VBST voltage up to 100 V. The device features independent high-side and low-side drive channels with matched propagation delays of less than 5 ns. Typical switching performance includes a rise time of 12 ns and a fall time of 9 ns when driving a 1 nF load at 12 V. It delivers an output current of 2.5 A and maintains a static current below 150 μA. The component functions within a temperature range of -40 °C to +125 °C and is housed in an SOIC-EP-8 package.
Feature Summary
- Independent control of high-side and low-side drive channels with integrated bootstrap diode
- TTL-compatible input logic for direct interfacing with standard digital controllers
- Under-voltage lockout protection on both high-side and low-side supplies to force outputs low
Applications
- High-frequency DC-DC converter topologies requiring isolated gate drive
- Motor control systems utilizing N-channel MOSFET half-bridge configurations
- Industrial power supplies and inverters operating within specified voltage limits
Procurement Notes
Verify the specific suffix 'A' against official Monolithic Power Systems documentation, as standard listings typically reference 'MP18021HN-LF-P'. Confirm that the 'A' variant does not indicate a restricted or obsolete status. Ensure the SOIC-EP-8 package thermal pad requirements are met during assembly. Cross-reference the datasheet revision date to confirm parameter stability before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring precise timing alignment between half-bridge legs due to its sub-5 ns matched delay specification. The integrated bootstrap diode simplifies circuit design by reducing external component count. Ensure the application voltage remains within the 9 V to 18 V supply range and that the high-side floating voltage does not exceed the 100 V limit. Consider the 2.5 A peak drive current capability relative to the target MOSFET gate charge requirements.
Part Context
This part belongs to the MP18021 series of high-frequency half-bridge gate drivers from Monolithic Power Systems. The series is characterized by its ability to drive N-channel MOSFETs efficiently while maintaining tight propagation delay matching. It serves as a critical interface component in power conversion stages where switching speed and reliability are paramount.
Replacement Considerations
Publicly confirmed substitute part numbers for the MP18021HN-A-LF are not available in the provided source material. Verify compatibility with alternative drivers based on pin-out, voltage ratings, and delay specifications if substitution is required.
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