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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:Monolithic Power Systems Inc.
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 16V
- Logic Voltage - VIL, VIH:1V, 2.4V
- Current - Peak Output (Source, Sink):2.5A, 2.5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):12ns, 9ns
- Operating Temperature:-40°C ~ 140°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package:8-SOICE
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):100 V
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Overview
The MP18021HN-LF-Z is a high-frequency N-channel MOSFET half-bridge gate driver manufactured by Monolithic Power Systems. It operates with a supply voltage range of 9 V to 16 V and supports a maximum bootstrap voltage of 100 V. The device features independent upper and lower channel control with a typical propagation delay of 16 ns and matched delay under 5 ns. Output performance includes a peak drive current of 2.5 A, with rise and fall times of 12 ns and 9 ns respectively at 12 V driving a 1 nF load. It functions within an operating temperature range of -40°C to +125°C and utilizes an SOIC-8 EPAD package.
Feature Summary
- Integrates a bootstrap diode to minimize external component count
- Provides undervoltage lockout protection for both high-side and low-side drivers
- Features TTL-compatible input logic levels
- Maintains low static current consumption below 150 μA
Applications
- High-frequency power switching circuits
- N-channel MOSFET half-bridge configurations
- Industrial motor drive systems
- Power supply management modules
Procurement Notes
Verify the specific suffix 'LF-Z' corresponds to the tape and reel packaging format when ordering. Confirm that the SOIC-8 EPAD physical dimensions match the target PCB footprint requirements. Ensure the selected variant aligns with the required thermal dissipation capabilities for the intended application environment.
Selection Notes
Select this component for applications requiring precise timing matching between high-side and low-side outputs. Consider the 100 V VBST rating for appropriate voltage isolation needs. Evaluate the 2.5 A output current capability against the total gate charge requirements of the target MOSFETs to ensure adequate switching speed.
Part Context
This part belongs to the MP18021 series of half-bridge gate drivers from Monolithic Power Systems. It is designed specifically for driving N-channel power MOSFETs in high-frequency environments. The series emphasizes compact integration and reliable operation across wide industrial temperature ranges.
Replacement Considerations
Direct substitutes include MP18021HN-LF-P and MP18021HN-LF. Verify package compatibility and electrical parameter equivalence before substitution.
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