MP18021HN-LF

Overview

The MP18021HN-LF-Z is a high-frequency N-channel MOSFET half-bridge gate driver from Monolithic Power Systems. It features independent control of high-side and low-side channels with matched propagation delays under 5ns. The device supports a VBST voltage range up to 100V and operates on a supply voltage between 9V and 16V. Typical rise and fall times are 12ns and 9ns respectively at 12V driving a 1nF load. Static current is less than 150μA, and it includes integrated bootstrap diodes and undervoltage lockout protection for both drivers.

Feature Summary

• Independent high-side and low-side channel control with matched delay characteristics
• Integrated bootstrap diode reduces external component count
• Undervoltage lockout protection forces outputs low during insufficient power conditions

Applications

• High-frequency switching power supplies
• Motor drive circuits requiring N-channel MOSFET control
• Industrial inverter applications

Procurement Notes

Verify the specific suffix (LF-Z or LF-P) against the required packaging format, as these indicate different reel or tube configurations. Confirm RoHS compliance status through official manufacturer documentation before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring precise timing alignment between half-bridge legs. Ensure the application voltage does not exceed the 100V VBST limit. Verify that the input logic levels are compatible with TTL standards for reliable signal interfacing.

Part Context

This part belongs to the MP18021 series of gate drivers designed for efficient power management. It is manufactured using silicon technology and is available in SOIC-8 packages with exposed pads for improved thermal performance and surface mount installation.

Replacement Considerations

MP18021HN-LF-P is a direct substitute offering identical electrical characteristics but packaged in tubes instead of reels.