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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8QFN
- Series:-
- Mfr:Monolithic Power Systems Inc.
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 18V
- Logic Voltage - VIL, VIH:1V, 2.4V
- Current - Peak Output (Source, Sink):2.5A, 2.5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):12ns, 9ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-VDFN Exposed Pad
- Supplier Device Package:8-QFN (3x3)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):100 V
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Overview
The MP18021HQ-A-LF-P is a high-frequency half-bridge gate driver designed for N-channel power MOSFETs. It features a VBST voltage range of up to 100V and operates with a supply voltage between 9V and 18V. The device provides independent control of high-side and low-side channels with matched propagation delays under 5ns. Typical switching times include a 12ns rise time and 9ns fall time when driving a 1nF load at 12V VDD. It incorporates an integrated bootstrap diode, UVLO protection for both drivers, and TTL-compatible inputs.
Feature Summary
- Independent high-side and low-side channel control with matched delay characteristics
- Integrated bootstrap diode reduces external component count
- Under-voltage lockout (UVLO) forces outputs low during insufficient power conditions
- TTL-compatible input logic levels
Applications
- High-frequency half-bridge power conversion circuits
- N-channel MOSFET gate drive applications
- Industrial motor drives
- Power supply topologies requiring isolated or floating high-side driving
Procurement Notes
Verify the specific suffix 'HQ' indicates the QFN-8 package variant rather than the standard SOIC-8 EPAD. Confirm that the '-A-' designation aligns with your required quality or revision level. Cross-reference the full part number against official MPS documentation to ensure compatibility with your PCB footprint and thermal requirements before finalizing orders.
Selection Notes
Select this component when driving N-channel MOSFETs in half-bridge configurations requiring high-speed switching. The 100V VBST rating supports high-voltage applications. Ensure the input signal meets TTL compatibility standards. Consider the QFN-8 package if space constraints preclude the use of the SOIC-8 variant. Verify that the 12V VDD operating condition matches your system's available rail.
Part Context
This part belongs to the MP18021 series of high-frequency half-bridge gate drivers from Monolithic Power Systems. The series is characterized by its ability to drive N-channel MOSFETs with precise timing control. The HQ suffix typically denotes a specific package type, distinguishing it from other variants like the HN series which may utilize different footprints such as SOIC-8 EPAD.
Replacement Considerations
MP18021HN-LF-P: Standard SOIC-8 EPAD package version of the same driver core. MP18021HQ-LF-Z: Tape and reel packaging variant of the HQ package. MP18021HQ-LF-P: Same package but potentially different reel quantity or manufacturer lot specifications.
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