MP18021HQ-A-LF-Z

MP18021HQ-A-LF-Z

$0.71
  • Description:IC GATE DRVR HALF-BRIDGE 8QFN
  • Series:-
  • Mfr:Monolithic Power Systems Inc.
  • Package:Tape & Reel (TR)

SKU:846d661aba0f Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 8QFN
  • Series:-
  • Mfr:Monolithic Power Systems Inc.
  • Package:Tape & Reel (TR)
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:9V ~ 18V
  • Logic Voltage - VIL, VIH:1V, 2.4V
  • Current - Peak Output (Source, Sink):2.5A, 2.5A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):12ns, 9ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-VDFN Exposed Pad
  • Supplier Device Package:8-QFN (3x3)
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):100 V

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MP18021HQ-A-LF-Z

Overview

The MP18021HQ-A-LF-Z is a high-frequency N-channel MOSFET half-bridge gate driver from Monolithic Power Systems. It supports a VBST voltage range up to 100V and features integrated bootstrap diodes. The device provides independent control of high-side and low-side channels with matched propagation delays under 5ns. Typical delay is 16ns, with rise and fall times of 12ns and 9ns respectively at 12V VDD driving a 1nF load. It operates on a 9V to 16V supply, draws less than 150μA static current, and includes UVLO protection for both drivers.

Feature Summary

  • High-voltage capability supporting up to 100V VBST for robust half-bridge operation
  • Precise timing matching with channel delay skew maintained below 5ns
  • Integrated bootstrap diode reduces external component count and board space
  • TTL-compatible inputs facilitate direct interfacing with standard logic controllers

Applications

  • High-frequency motor drive systems requiring precise phase control
  • Industrial power conversion circuits utilizing N-channel MOSFETs
  • Inverter topologies demanding fast switching transitions and low cross-conduction risk

Procurement Notes

Verify the specific suffix 'HQ' indicates the QFN-8 package variant distinct from the SOIC-8 'HN' version. Confirm that the '-A-' designation aligns with your required manufacturing lot or revision specifications. Ensure compatibility with your PCB footprint, as package dimensions differ between SOIC and QFN options. Cross-reference the datasheet for thermal pad requirements associated with the QFN-8 enclosure.

Selection Notes

Select this component when application requirements demand tight propagation delay matching to minimize shoot-through currents in half-bridge configurations. The integrated bootstrap diode simplifies design compared to discrete solutions. Consider the QFN-8 package for superior thermal performance and smaller footprint if board space is constrained. Verify that the input logic levels match the TTL compatibility specification of the driver.

Part Context

This part belongs to the MP18021 series of high-frequency gate drivers designed for N-channel MOSFETs. The series emphasizes speed and reliability in power switching applications. The HQ suffix typically denotes the QFN-8 package option, offering an alternative to the standard SOIC-8 packaging found in other variants within the same functional family.

Replacement Considerations

MP18021HN-LF-Z offers identical electrical characteristics but utilizes an SOIC-8 package instead of QFN-8. MP18021HQ-LF-P provides the same QFN-8 form factor with different tape-and-reel packaging. Verify pinout and thermal pad connectivity before substituting.

MP18021HQ-A-LF-ZMP18021HQ-A-LF-Z
$0.71
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