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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 10QFN
- Series:-
- Mfr:Monolithic Power Systems Inc.
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:1V, 2.4V
- Current - Peak Output (Source, Sink):2.5A, 2.5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):12ns, 9ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-VFDFN Exposed Pad
- Supplier Device Package:10-QFN (3x3)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):100 V
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Overview
The MP1907GQ-Z is a half-bridge gate driver manufactured by Monolithic Power Systems. It features two independent drivers with non-inverting input logic, designed for driving N-channel MOSFETs. The device supports a high-side voltage up to 100 V via bootstrap operation and operates within a supply voltage range of 4.5 V to 18 V. It delivers peak output currents of 2.5 A for both sourcing and sinking. Typical switching characteristics include rise and fall times of 12 ns and 9 ns, respectively. The component is housed in a 10-QFN (3x3 mm) package with an exposed pad and functions reliably across a junction temperature range of -40°C to +125°C.
Feature Summary
- Supports high-side voltages up to 100 V using bootstrap configuration
- Delivers symmetrical 2.5 A peak source and sink current capability
- Features fast switching performance with typical 12 ns rise and 9 ns fall times
- Operates with non-inverting logic inputs compatible with standard digital signals
Applications
- Motor control systems requiring half-bridge configurations
- Power factor correction circuits
- DC-DC converter topologies utilizing high-side N-channel MOSFETs
- Industrial power supply designs
Procurement Notes
Verify the specific suffix 'Z' indicates RoHS compliance when ordering. Confirm that the 10-QFN package dimensions match the target PCB footprint. Ensure the design accommodates the required bootstrap capacitor and high-side drive voltage requirements for the intended load. Check for any specific handling instructions related to the exposed thermal pad on the QFN package.
Selection Notes
Select this component when a robust half-bridge driver with high voltage tolerance is required. The 2.5 A output current is suitable for medium-power applications. Consider the 10-QFN package size for space-constrained designs. Verify that the operating supply voltage range of 4.5 V to 18 V aligns with the system's available power rails. Ensure the non-inverting logic interface matches the control signal polarity.
Part Context
The MP1907GQ-Z belongs to the MP1907 series of half-bridge gate drivers from Monolithic Power Systems. This series is designed for applications requiring reliable high-side switching of N-channel MOSFETs. The device integrates necessary protection features and fast switching capabilities to optimize efficiency in power conversion stages. It is part of MPS's portfolio of PMIC solutions focused on industrial and consumer electronics.
Replacement Considerations
MP1907GQ-P is listed as a direct substitute.
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