MP1918GQE-P

Overview

The MP1918GQE-P is a high-frequency half-bridge gate driver designed for Gallium Nitride (GaN) and MOSFET applications, manufactured by Monolithic Power Systems. It operates with a supply voltage range of 3.7 V to 5.5 V and supports output voltages up to 100 V. The device features a TTL logic interface and delivers an output current of 5 A. Key timing parameters include a maximum propagation delay of 30 ns, a maximum on-delay of 30 ns, and a maximum off-delay of 30 ns. Rise and fall times are specified at 5 ns and 3 ns, respectively, with a maximum deadtime of 6 ns. It functions within a temperature range of -40°C to +125°C and is housed in a QFN-14 package.

Feature Summary

• Integrated half-bridge topology optimized for driving GaN transistors and MOSFETs
• High-speed switching performance with low rise and fall times
• Built-in deadtime control to prevent shoot-through conditions
• TTL-compatible input logic for direct microcontroller interfacing

Applications

• Gallium Nitride power stage driving
• High-frequency synchronous buck converters
• Motor drive inverters
• Class-D audio amplifiers

Procurement Notes

Verify the specific suffix 'P' against the manufacturer's official datasheet to confirm packaging details and availability status. Ensure the component matches the required QFN-14 footprint and electrical specifications for your design. Cross-reference the part number with authorized distributors to confirm authenticity and lead times. Check for any recent revisions or obsolescence notices from Monolithic Power Systems before finalizing procurement.

Selection Notes

Select this driver when high switching speeds and precise deadtime control are critical for GaN or MOSFET efficiency. The 5 A output current capability ensures robust gate charging for fast transitions. Consider the 100 V output rating for medium-voltage applications. Verify that the 3.7 V minimum supply voltage aligns with your system's logic levels. The QFN-14 package offers a compact solution for space-constrained designs requiring thermal performance.

Part Context

This component belongs to MPS's gate driver portfolio, specifically targeting high-efficiency power conversion systems. It complements other PMIC solutions by providing dedicated switching control for external power stages. The half-bridge configuration allows for versatile implementation in various topologies, including buck, boost, and full-bridge circuits, supporting modern high-density power designs.

Replacement Considerations

Consult MPS official documentation for qualified alternatives. No public substitute part numbers are confirmed in the provided data.