MP1921HQE-A-LF-P

Description：IC GATE DRVR HALF-BRIDGE 9QFN
Series：-
Mfr：Monolithic Power Systems Inc.
Package：Tape & Reel (TR)

SKU:89c7012dfa37 Category: Gate Drivers Brand: Monolithic Power Systems Inc.

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Product introduction

Product Detailed Parameters

Description：IC GATE DRVR HALF-BRIDGE 9QFN
Series：-
Mfr：Monolithic Power Systems Inc.
Package：Tape & Reel (TR)
Driven Configuration：Half-Bridge
Channel Type：Independent
Number of Drivers：2
Gate Type：MOSFET (N-Channel)
Voltage - Supply：9V ~ 18V
Logic Voltage - VIL, VIH：1V, 2.4V
Current - Peak Output (Source, Sink)：2.5A, 2.5A
Input Type：Non-Inverting
Rise / Fall Time (Typ)：12ns, 9ns
Operating Temperature：-40°C ~ 125°C (TJ)
Mounting Type：Surface Mount
Package / Case：9-VFDFN Exposed Pad
Supplier Device Package：9-QFN (3x3)
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：120 V

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MP1921HQE-A-LF-P

Overview

The MP1921HQE-A-LF-P is a high-frequency half-bridge MOSFET gate driver manufactured by Monolithic Power Systems. It features dual drivers with two outputs and supports an input supply voltage range from 9 V to 18 V. The device delivers a peak output current of 2.5 A, ensuring efficient switching performance. Electrical characteristics include a rise time of 12 ns and a fall time of 9 ns. It operates reliably within a temperature range of -40 °C to +125 °C and is housed in an SOIC-8 surface-mount package.

Feature Summary

High-frequency half-bridge configuration for efficient power switching
Robust 2.5 A output drive capability for fast MOSFET transitions
Wide operating temperature range suitable for demanding environments

Applications

Motor control systems
Power supply circuits
Industrial automation drives

Procurement Notes

Verify the specific suffix 'HQE' against official MPS documentation to confirm pinout compatibility and electrical specifications. Ensure the selected variant matches the required thermal management and packaging constraints for the target application design.

Selection Notes

Select this component when a compact half-bridge solution with high peak current drive is required. Consider the SOIC-8 footprint and the 9 V to 18 V supply range during circuit design. Evaluate thermal dissipation requirements given the 125 °C maximum junction temperature rating.

Part Context

This part belongs to the MPS gate driver family, designed for driving power MOSFETs in half-bridge topologies. It integrates necessary logic to manage high-side and low-side switching, providing isolated drive signals essential for synchronous rectification and motor drive applications.